Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip with Under-Layered Nitride

Chan Yu Liao; Hsiao Chun Lin; Chao Lung Wang; I. Che Lee; Chia Hsin Chou; Yu Ren Li; Huang-Chung Cheng

doi:10.1109/LED.2016.2588735

Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip with Under-Layered Nitride

Chan Yu Liao, Hsiao Chun Lin, Chao Lung Wang, I. Che Lee, Chia Hsin Chou, Yu Ren Li, Huang-Chung Cheng

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm ² /V-s, with only minor deviation.

Original language	English
Article number	7506317
Pages (from-to)	1135-1138
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	9
DOIs	https://doi.org/10.1109/LED.2016.2588735
State	Published - 1 Sep 2016

Keywords

Excimer laser crystallization (ELC)
light absorption layer
polycrystalline silicon (poly-Si)
single-crystal-like
Thin-Film transistor (TFT)

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10.1109/LED.2016.2588735

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@article{843173d125644360b13c6fb6636f09b4,

title = "Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip with Under-Layered Nitride",

abstract = " High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm 2 /V-s, with only minor deviation. ",

keywords = "Excimer laser crystallization (ELC), light absorption layer, polycrystalline silicon (poly-Si), single-crystal-like, Thin-Film transistor (TFT)",

author = "Liao, {Chan Yu} and Lin, {Hsiao Chun} and Wang, {Chao Lung} and Lee, {I. Che} and Chou, {Chia Hsin} and Li, {Yu Ren} and Huang-Chung Cheng",

year = "2016",

month = sep,

day = "1",

doi = "10.1109/LED.2016.2588735",

language = "English",

volume = "37",

pages = "1135--1138",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip with Under-Layered Nitride. / Liao, Chan Yu; Lin, Hsiao Chun; Wang, Chao Lung; Lee, I. Che; Chou, Chia Hsin; Li, Yu Ren; Cheng, Huang-Chung.

In: IEEE Electron Device Letters, Vol. 37, No. 9, 7506317, 01.09.2016, p. 1135-1138.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip with Under-Layered Nitride

AU - Liao, Chan Yu

AU - Lin, Hsiao Chun

AU - Wang, Chao Lung

AU - Lee, I. Che

AU - Chou, Chia Hsin

AU - Li, Yu Ren

AU - Cheng, Huang-Chung

PY - 2016/9/1

Y1 - 2016/9/1

N2 - High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm 2 /V-s, with only minor deviation.

AB - High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm 2 /V-s, with only minor deviation.

KW - Excimer laser crystallization (ELC)

KW - light absorption layer

KW - polycrystalline silicon (poly-Si)

KW - single-crystal-like

KW - Thin-Film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=84984824864&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2588735

DO - 10.1109/LED.2016.2588735

M3 - Article

AN - SCOPUS:84984824864

VL - 37

SP - 1135

EP - 1138

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

M1 - 7506317

ER -