Location-Controlled Single-Crystal-Like Silicon Thin-Film Transistors by Excimer Laser Crystallization on Recessed-Channel Silicon Strip with Under-Layered Nitride

Chan Yu Liao, Hsiao Chun Lin, Chao Lung Wang, I. Che Lee, Chia Hsin Chou, Yu Ren Li, Huang-Chung Cheng

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

High-performance Si thin-film transistors (TFTs) on the recessed-channel Si strips with the under-layered nitride film have been fabricated using excimer laser crystallization (ELC). A nitride film was added as a light absorption layer to suppress solidification along the edge of the Si strip. Thus, only one primary grain boundary perpendicular to the Si strip formed in the middle of the recessed region during ELC. The single-crystal-like Si TFTs fabricated on one-half of the recessed region are capable of excellent field-effect mobility of 640 cm 2 /V-s, with only minor deviation.

Original languageEnglish
Article number7506317
Pages (from-to)1135-1138
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number9
DOIs
StatePublished - 1 Sep 2016

Keywords

  • Excimer laser crystallization (ELC)
  • light absorption layer
  • polycrystalline silicon (poly-Si)
  • single-crystal-like
  • Thin-Film transistor (TFT)

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