Location-controlled-grain Technique for Monolithic 3D BEOL FinFET Circuits

Chih Chao Yang, Tung Ying Hsieh, Po-Tsang Huang, Kuan-Neng Chen, Wan Chi Wu, Shih Wei Chen, Chia He Chang, Chang Hong Shen, Jia Min Shieh, Chen-Ming Hu, Meng Chyi Wu, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A location-controlled-grain technique is presented for fabricating BEOL monolithic 3D FinFET ICs over SiO 2 . The grain-boundary free Si FinFETs thus fabricated exhibit steep sub-threshold swing (<70mV/dec.), high driving currents (n-type: 363 μA/μm and p-type: 385 μ Aμm), and high I on /I off (>10 6 ). According to simulation, the thickness of the interlayer dielectric plays an important role and shall be thicker than 250nm so that the sequential pulse laser crystallization process does not heat the bottom devices and interconnects to more than 400 °C.

Original languageEnglish
Title of host publication2018 IEEE International Electron Devices Meeting, IEDM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages11.3.1-11.3.4
ISBN (Electronic)9781728119878
DOIs
StatePublished - 16 Jan 2019
Event64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
Duration: 1 Dec 20185 Dec 2018

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2018-December
ISSN (Print)0163-1918

Conference

Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
CountryUnited States
CitySan Francisco
Period1/12/185/12/18

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    Yang, C. C., Hsieh, T. Y., Huang, P-T., Chen, K-N., Wu, W. C., Chen, S. W., Chang, C. H., Shen, C. H., Shieh, J. M., Hu, C-M., Wu, M. C., & Yeh, W. K. (2019). Location-controlled-grain Technique for Monolithic 3D BEOL FinFET Circuits. In 2018 IEEE International Electron Devices Meeting, IEDM 2018 (pp. 11.3.1-11.3.4). [8614708] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2018-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2018.8614708