Localized Tunneling Phenomena of Nanometer Scaled High- K Gate-Stack

Po Jui Jerry Lin*, Che An Andy Lee, Chih Wei Kira Yao, Hsin Jyun Vincent Lin, Hiroshi Watanabe

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The 3-D simulator, which is capable of sensing potential change due to single electron's movement via a local trap inside the high-K gate-stacking block, is developed. Then, we carefully investigate how the electron's movement effects on the reliabilities of high-K gate-stack far beyond 10-nm generations. The simulation result shows that the potential change caused by a single electron's charge is about a few hundered millivolts inside the high-K gate-stacking block. By this result, random telegraph noise (RTN) and trap-assisted tunneling (TAT) are carefully investigated with respect to various applied biases, interface suboxide layer thicknesses, and the dielectric constant of high-K dielectrics (K). We also take into account the Coulomb blockade of a local trap, and then obtain several phase diagrams for distinguishing RTN and TAT under various conditions. It is then found that K = 30 can most effectively suppress the gate leakage current.

Original languageEnglish
Article number7953544
Pages (from-to)3077-3083
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number8
DOIs
StatePublished - 1 Aug 2017

Keywords

  • Coulomb energy variation
  • high-K dielectrics
  • random telegraph noise (RTN)
  • single electron
  • trap-assisted tunneling (TAT)

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