Localized lasing mode in GaN quasi-periodic nanopillars at room temperature

Tzeng Tsong Wu, Chih Cheng Chen, Hao Wen Chen, Tien-Chang Lu, Shing Chung Wang, Cheng-Huang Kuo

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, GaN quasi-periodic nanopillars were fabricated and investigated. The quasi-periodic nanopillars were realized by nanoimprint technique and selective area growth. Localized lasing mode was identified in the GaN quasi-periodic nanopillars. The threshold energy density and lasing wavelength were 40 mJ/cm2 and 369 nm, respectively. The divergence angle and near-field lasing spot were measured to be 10.5° and 3.6 μm, respectively. The spontaneous emission coupling factor of localized lasing mode was estimated to be 9.4 × 10-3. The mode patterns in the real and reciprocal spaces were calculated by the multiple scattering method to confirm the mode localization behavior.

Original languageEnglish
Article number6488713
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume19
Issue number4
DOIs
StatePublished - Jul 2013

Keywords

  • GaN
  • mode localization
  • nanopillar

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