Localized degradation and breakdown study of cerium-oxide high-κ gate dielectric material using scanning tunneling microscopy

K. Shubhakar*, K. L. Pey, S. S. Kushvaha, S. J. O'Shea, M. Bosman, M. Kouda, K. Kakushima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this work, we use scanning tunneling microscopy (STM) to study the localized degradation, breakdown and post-breakdown of a high-κ (HK) gate dielectric material, cerium oxide (CeO2) deposited directly on a silicon substrate. The novelty of the study lies in analyzing the breakdown phenomenon from a macroscopic metal-oxide-semiconductor (MOS) capacitor level to a very localized nanoscale breakdown location. The physics of failure for these polycrystalline cerium oxide HK films is also discussed.

Original languageEnglish
Title of host publicationIPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits
DOIs
StatePublished - 2010
Event17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010 - Singapore, Singapore
Duration: 5 Jul 20109 Jul 2010

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010
CountrySingapore
CitySingapore
Period5/07/109/07/10

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