Localization and electron-electron interactions in few-layer epitaxial graphene

Shun-Tsung Lo, Fan Hung Liu, Chang Shun Hsu, Chiashain Chuang, Lung I. Huang, Yasuhiro Fukuyama, Yanfei Yang, Randolph E. Elmquist, Chi Te Liang

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.

Original languageEnglish
Article number245201
JournalNanotechnology
Volume25
Issue number24
DOIs
StatePublished - 20 Jun 2014

Keywords

  • grapheme
  • interactions
  • localization

Fingerprint Dive into the research topics of 'Localization and electron-electron interactions in few-layer epitaxial graphene'. Together they form a unique fingerprint.

Cite this