Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress

Yao Jen Lee*, Chia Hao Fan, Wen Luh Yang, Wen Yan Lin, Bohr Ran Huang, Tien-Sheng Chao, D. S. Chuu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationProceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages88-91
Number of pages4
DOIs
StatePublished - 1 Dec 2006
Event13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore
Duration: 3 Jul 20067 Jul 2006

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
CountrySingapore
CitySingapore
Period3/07/067/07/06

Cite this

Lee, Y. J., Fan, C. H., Yang, W. L., Lin, W. Y., Huang, B. R., Chao, T-S., & Chuu, D. S. (2006). Local Strained Channel (LSC) nMOSFETs by different poly-Si gate and SiN capping layer thicknesses: Mobility enhancement, size dependence, and hot carrier stress. In Proceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 (pp. 88-91). [4017029] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2006.251004