Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

V. A. Volodin*, V. A. Gritsenko, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.

Original languageEnglish
Pages (from-to)424-427
Number of pages4
JournalTechnical Physics Letters
Volume44
Issue number5
DOIs
StatePublished - 1 May 2018

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