Linearity of scanning probe lithography on (110) silicon wafer

Jeng-Tzong Sheu, C. H. Wu, K. S. You, Kow-Ming Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Nanofabrication and fabrication of nanodevices on single-crystal silicon have been demonstrated by electric-field-enhanced local oxidation on the semiconductor materials using a scanning probe microscope (SPM). The advantages of the SPM lithography technique are its high resolution and absence of radiation damage in the substrate to be patterned. Scanning probe lithography (SPL) is highly depended on tip bias, tip force, scanning speed and air humidity of patterning environment. In this study, we have demonstrated that control of these four parameters to achieve nanopatterning on (110) silicon wafer such that the line width of desired nanopattern down to 25 nm can be easily obtained under control. The resistivity of silicon substrate is around 1∼10 ohm-cm. The diameter of silicon SPM tip is around 10 nm. Samples were hydrogen-passivated by dipping in 10% aqueous HF solution for 15 sec to remove surface native oxide before performing SPM local oxidation process. The line/space SiOx patterns on (110) silicon substrate were generated by SPM-based local oxidation. Then, anisotropic wet etching process was followed with a 34 wt.% aqueous KOH solution at 50°C for 45 sec. Utilizing the orientation-dependent etching (ODE) of crystallographic planes, the line/space nano-structures with feature size down to 25 nm and aspect ratio larger than 8:1 with KOH wet etching were demonstrated. With multi-pixel scanning of SPL, we can control the pattern width and pattern height of local oxidation and then transferred these patterns into the silicon substrate with wet etching. We have successfully demonstrated accurate linear control of nano-structures fabrication for different linewidth from 25 to 77 nm by SPL technique. The standard deviation (1σ) for 25 nm nanostructures is 3.01 nm.

Original languageEnglish
Title of host publicationProceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
PublisherIEEE Computer Society
Pages23-26
Number of pages4
ISBN (Electronic)0780372158
DOIs
StatePublished - 1 Jan 2001
Event1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 - Maui, United States
Duration: 28 Oct 200130 Oct 2001

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2001-January
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference1st IEEE Conference on Nanotechnology, IEEE-NANO 2001
CountryUnited States
CityMaui
Period28/10/0130/10/01

Keywords

  • Electric-field-enhanced
  • KOH wet etching
  • Nanofabrication
  • Orientation-dependent etching (ODE)
  • Scanning probe lithography (SPL)

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  • Cite this

    Sheu, J-T., Wu, C. H., You, K. S., & Chang, K-M. (2001). Linearity of scanning probe lithography on (110) silicon wafer. In Proceedings of the 2001 1st IEEE Conference on Nanotechnology, IEEE-NANO 2001 (pp. 23-26). [966386] (Proceedings of the IEEE Conference on Nanotechnology; Vol. 2001-January). IEEE Computer Society. https://doi.org/10.1109/NANO.2001.966386