Linearity characteristics of field-plated AlGaN/GaN high electron mobility transistors for microwave applications

Jui Chien Huang, Heng-Tung Hsu, Edward Yi Chang*, Chung Yu Lu, Chia Ta Chang, Fang Yao Kuo, Yi Chung Chen, Ting Hung Hsu

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) was fabricated. Investigations on the linearity characteristics were performed through two-tone and wide band code division multiple access (WCDMA) modulated excitations. The FP-HEMT exhibited an improved breakdown voltage of 160 V compared with that of the conventional HEMT. Additionally, a higher output power of 25.4 dBm with 43% power added efficiency at a 30V drain bias at 2 GHz was achieved. When biased at 30 V and 15mA/mm current density, the third-order intermodulation (IM3) level was measured to be -27.1 dBc (at P1dB) and the adjacent channel power rejection (ACPR) was -33.8dBc (at P 1dB) under WCDMA modulation at 2GHz. Measurement results revealed that the field-plated structure improved the linearity performance over the conventional structure at high output power levels even beyond P1dB.

Original languageEnglish
Article number014103
JournalJapanese journal of applied physics
Volume49
Issue number1 Part 1
DOIs
StatePublished - 19 Apr 2010

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