Linearity characteristics of field-plated AlGaN/GaN HEMTs for microwave application

Jui Chien Huang*, Teng Tung Hsu, Edward Yi Chang, Chung Yu Lu, Chia Ta Chang, Yi Chung Chen, Ting Hung Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Field-plated (FP) AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated and characterized for microwave applications. After the implement of the FP structure, lower transconductance (Gm) was observed on DC and small signal characteristics of the GaN power HEMT. Even FP-HEMT showed lower linear gain, the devices still exhibited higher output power and higher power added efficiency than conventional HEMT. However, lower trans-conductance and higher gate-drain capacitance (Cgd) didn't influence the linearity characteristics of the FP-HEMT. Finally, a 100μm GaN power HEMT on sapphire was fabricated with linear gain of 15.39dB, outpout power of 25.36dBm, and power added efficiency of 43%. The device also demonstrated high linearity of -27.1dBc for IMD3 and 33.88dBc for ACPR when biased at drain voltage of 30V with current density of 15mA/mm at 2GHz.

Original languageEnglish
Title of host publicationStudent Posters (General) - 215th ECS Meeting
Pages69-75
Number of pages7
Edition23
DOIs
StatePublished - 1 Dec 2009
EventGeneral Student Poster Session - 215th ECS Meeting - San Francisco, CA, United States
Duration: 24 May 200929 May 2009

Publication series

NameECS Transactions
Number23
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceGeneral Student Poster Session - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period24/05/0929/05/09

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