Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mndoped GaN intermediate band photodetection

Feng Wen Huang, Jinn Kong Sheu, Ming Lun Lee, Shang Ju Tu, Wei Chih Lai, Wen Che Tsai, Wen-Hao Chang

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vaporphase epitaxy are demonstrated. The up-converters exhibit a significant upconverted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of 450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

Original languageEnglish
Pages (from-to)A1211-A1218
JournalOptics Express
Volume19
Issue number106
DOIs
StatePublished - 7 Nov 2011

Fingerprint Dive into the research topics of 'Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mndoped GaN intermediate band photodetection'. Together they form a unique fingerprint.

Cite this