Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction

Jin He; Xuemei Xi; Mansun Chan; Ali Niknejad; Chen-Ming Hu

Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction

Jin He^*, Xuemei Xi, Mansun Chan, Ali Niknejad, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are obtained by the applying the linear cofactor difference operator to the drain current versus gate voltage curve in the linear region. These extrema can be directly used to find the threshold voltage and mobility of a MOSFET. The method has been tested with experimentally fabricated MOSFETs and simulation data obtained by the device simulator DESSIS-ISE. The results agree well with those obtained with the standard second-derivative method, which demonstrates the validity of the method presented.

Original language	English
Title of host publication	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Editors	M. Laudon, B. Romanowicz
Pages	132-135
Number of pages	4
State	Published - 2 Nov 2004
Event	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States Duration: 7 Mar 2004 → 11 Mar 2004

Publication series

Name	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume	2

Conference

Conference	2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Country	United States
City	Boston, MA
Period	7/03/04 → 11/03/04

Keywords

Drain current linear cofactor difference
MOSFET
Parameter extraction
Threshold voltage

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He, J., Xi, X., Chan, M., Niknejad, A., & Hu, C-M. (2004). Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction. In M. Laudon, & B. Romanowicz (Eds.), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 (pp. 132-135). (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).

He, Jin ; Xi, Xuemei ; Chan, Mansun ; Niknejad, Ali ; Hu, Chen-Ming. / Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction. 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. editor / M. Laudon ; B. Romanowicz. 2004. pp. 132-135 (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004).

@inproceedings{7334005f5ef44106b23db100c4d78d52,

title = "Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction",

abstract = "The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are obtained by the applying the linear cofactor difference operator to the drain current versus gate voltage curve in the linear region. These extrema can be directly used to find the threshold voltage and mobility of a MOSFET. The method has been tested with experimentally fabricated MOSFETs and simulation data obtained by the device simulator DESSIS-ISE. The results agree well with those obtained with the standard second-derivative method, which demonstrates the validity of the method presented.",

keywords = "Drain current linear cofactor difference, MOSFET, Parameter extraction, Threshold voltage",

author = "Jin He and Xuemei Xi and Mansun Chan and Ali Niknejad and Chen-Ming Hu",

year = "2004",

month = nov,

day = "2",

language = "English",

isbn = "0972842276",

series = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

pages = "132--135",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004",

note = "null ; Conference date: 07-03-2004 Through 11-03-2004",

}

He, J, Xi, X, Chan, M, Niknejad, A & Hu, C-M 2004, Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction. in M Laudon & B Romanowicz (eds), 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, vol. 2, pp. 132-135, 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004, Boston, MA, United States, 7/03/04.

Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction. / He, Jin; Xi, Xuemei; Chan, Mansun; Niknejad, Ali; Hu, Chen-Ming.

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004. ed. / M. Laudon; B. Romanowicz. 2004. p. 132-135 (2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction

AU - He, Jin

AU - Xi, Xuemei

AU - Chan, Mansun

AU - Niknejad, Ali

AU - Hu, Chen-Ming

PY - 2004/11/2

Y1 - 2004/11/2

N2 - The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are obtained by the applying the linear cofactor difference operator to the drain current versus gate voltage curve in the linear region. These extrema can be directly used to find the threshold voltage and mobility of a MOSFET. The method has been tested with experimentally fabricated MOSFETs and simulation data obtained by the device simulator DESSIS-ISE. The results agree well with those obtained with the standard second-derivative method, which demonstrates the validity of the method presented.

AB - The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are obtained by the applying the linear cofactor difference operator to the drain current versus gate voltage curve in the linear region. These extrema can be directly used to find the threshold voltage and mobility of a MOSFET. The method has been tested with experimentally fabricated MOSFETs and simulation data obtained by the device simulator DESSIS-ISE. The results agree well with those obtained with the standard second-derivative method, which demonstrates the validity of the method presented.

KW - Drain current linear cofactor difference

KW - MOSFET

KW - Parameter extraction

KW - Threshold voltage

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SN - 0972842276

SN - 9780972842273

T3 - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

SP - 132

EP - 135

BT - 2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

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