Linear cofactor difference extrema of MOSFET's drain current and their application in parameter extraction

Jin He*, Xuemei Xi, Mansun Chan, Ali Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The linear cofactor difference extrema of metaloxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are obtained by the applying the linear cofactor difference operator to the drain current versus gate voltage curve in the linear region. These extrema can be directly used to find the threshold voltage and mobility of a MOSFET. The method has been tested with experimentally fabricated MOSFETs and simulation data obtained by the device simulator DESSIS-ISE. The results agree well with those obtained with the standard second-derivative method, which demonstrates the validity of the method presented.

Original languageEnglish
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages132-135
Number of pages4
StatePublished - 2 Nov 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: 7 Mar 200411 Mar 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume2

Conference

Conference2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period7/03/0411/03/04

Keywords

  • Drain current linear cofactor difference
  • MOSFET
  • Parameter extraction
  • Threshold voltage

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