Limits on gate insulator thickness for MISFET operation in pure-oxide and nitrided-oxide gate cases

T. Morimoto*, H. S. Momose, M. Tsuchiaki, Y. Ozawa, K. Yamabe, H. Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

11 Scopus citations

Abstract

Ultra-thin gate film MISFET operation was investigated in detail. When the gate film is extremely thin, significant gate leakage current, a result of tunneling, decreases the drain current and increases the source current, which results in anomalous transistor characteristics. Reoxidation of the 'ON' film is a very effective way to suppress the leakage current without reducing drivability. It was found that the practical tunneling limit of the film thickness is around 2.5nm. Below this limit, drivability and transconductance fall significantly.

Original languageEnglish
Pages23-25
Number of pages3
DOIs
StatePublished - 1991
Event23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
Duration: 27 Aug 199129 Aug 1991

Conference

Conference23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period27/08/9129/08/91

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