Ultra-thin gate film MISFET operation was investigated in detail. When the gate film is extremely thin, significant gate leakage current, a result of tunneling, decreases the drain current and increases the source current, which results in anomalous transistor characteristics. Reoxidation of the 'ON' film is a very effective way to suppress the leakage current without reducing drivability. It was found that the practical tunneling limit of the film thickness is around 2.5nm. Below this limit, drivability and transconductance fall significantly.
|Number of pages||3|
|State||Published - 1991|
|Event||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
Duration: 27 Aug 1991 → 29 Aug 1991
|Conference||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||27/08/91 → 29/08/91|