Light-output-power enhancement of gan-based light-emitting diodes on an n-gan layer using a SiO2 photonic quasi-crystal overgrowth

H. W. Huang, J. K. Huang, K. Y. Lee, C. F. Lin, Hao-Chung Kuo

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

GaN-based LEDs with a SiO2 oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d =1.2μm was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO2 oxide PQC structure on an n-GaN layer.

Original languageEnglish
Article number5447626
Pages (from-to)573-575
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number6
DOIs
StatePublished - 1 Jun 2010

Keywords

  • Gallium nitride (GaN)
  • Light-emitting diodes (LEDs)
  • Photonic quasi-crystal (PQC)

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