Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching

Chih Chiang Kao; Hao-Chung Kuo; K. F. Yeh; J. T. Chu; W. L. Peng; H. W. Huang; Tien-Chang Lu; S. C. Wang

doi:10.1109/LPT.2007.897455

Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching

Chih Chiang Kao^*, Hao-Chung Kuo, K. F. Yeh, J. T. Chu, W. L. Peng, H. W. Huang, Tien-Chang Lu, S. C. Wang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method.

Original language	English
Pages (from-to)	849-851
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	11
DOIs	https://doi.org/10.1109/LPT.2007.897455
State	Published - 1 Jun 2007

Keywords

GaN
Laser lift-off (LLO)
Light extraction efficiency
Light-emitting diode (LED)
Nano-roughened surface

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10.1109/LPT.2007.897455

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@article{b4dacfee020d49688e82d8d59cb8603b,

title = "Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching",

abstract = "In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method.",

keywords = "GaN, Laser lift-off (LLO), Light extraction efficiency, Light-emitting diode (LED), Nano-roughened surface",

author = "Kao, {Chih Chiang} and Hao-Chung Kuo and Yeh, {K. F.} and Chu, {J. T.} and Peng, {W. L.} and Huang, {H. W.} and Tien-Chang Lu and Wang, {S. C.}",

year = "2007",

month = jun,

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doi = "10.1109/LPT.2007.897455",

language = "English",

volume = "19",

pages = "849--851",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching. / Kao, Chih Chiang; Kuo, Hao-Chung; Yeh, K. F.; Chu, J. T.; Peng, W. L.; Huang, H. W.; Lu, Tien-Chang; Wang, S. C.

In: IEEE Photonics Technology Letters, Vol. 19, No. 11, 01.06.2007, p. 849-851.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching

AU - Kao, Chih Chiang

AU - Kuo, Hao-Chung

AU - Yeh, K. F.

AU - Chu, J. T.

AU - Peng, W. L.

AU - Huang, H. W.

AU - Lu, Tien-Chang

AU - Wang, S. C.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method.

AB - In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method.

KW - GaN

KW - Laser lift-off (LLO)

KW - Light extraction efficiency

KW - Light-emitting diode (LED)

KW - Nano-roughened surface

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JO - IEEE Photonics Technology Letters

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