Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching

Chih Chiang Kao*, Hao-Chung Kuo, K. F. Yeh, J. T. Chu, W. L. Peng, H. W. Huang, Tien-Chang Lu, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method.

Original languageEnglish
Pages (from-to)849-851
Number of pages3
JournalIEEE Photonics Technology Letters
Volume19
Issue number11
DOIs
StatePublished - 1 Jun 2007

Keywords

  • GaN
  • Laser lift-off (LLO)
  • Light extraction efficiency
  • Light-emitting diode (LED)
  • Nano-roughened surface

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