Light extraction enhancement of n-side up light-emitting diodes without electrodes covering by wafer bonding and textured surfaces

Ray-Hua Horng, Y. A. Lu, D. S. Wuu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Textured n-side-up GaN LED with interdigitated imbedded electrodes (HE) eliminating the electrode-shading loss with high reflection mirror and double-side roughening on both p-GaN and undoped-GaN layers have been investigated. The epitaxial layers of the device are grown on (0001) sapphire substrates by metal-organic chemical vapor deposition. The devices are subsequently fabricated with wafer-bonding, laser lift-off, chemical dry/wet etching techniques. This n-side up structure was useful to enhance light extraction and increase the light output power. We compared the performance of the luminance intensity(at 350 mA injection current), which is 78.85 % and 115.38 % higher than those of the conventional structure and the p-side up structure with high reflection mirror on silicon substrate with electrode shading, respectively.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
Pages53-59
Number of pages7
Edition4
DOIs
StatePublished - 29 Dec 2010
EventWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 25 Apr 201030 Apr 2010

Publication series

NameECS Transactions
Number4
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period25/04/1030/04/10

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    Horng, R-H., Lu, Y. A., & Wuu, D. S. (2010). Light extraction enhancement of n-side up light-emitting diodes without electrodes covering by wafer bonding and textured surfaces. In Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 (4 ed., pp. 53-59). (ECS Transactions; Vol. 28, No. 4). https://doi.org/10.1149/13377099