Light extraction enhancement of InGaN light-emitting diode by roughening both undoped micropillar-structure GaN and p-GaN as well as employing an omnidirectional reflector

Ray-Hua Horng*, Xinhe Zheng, Chuang Yu Hsieh, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Light extraction enhancement of InGaN-GaN light-emitting diode (LED) is demonstrated with double-side roughening both on the p-GaN surface and the micropillar undoped GaN as well as an omnidirectional reflector via patterning sapphire substrate, wafer-bonding, laser lift-off, and chemical wet etching technologies. This device design enhances the light output power up to 77% compared to the conventional LED with a single roughened p-GaN on patterned sapphire substrate at an injection current of 350 mA. Due to the employment of Si carrier, the junction temperature measurement at 350 mA yields a 46.6 °C lower than that of the conventional LEDs.

Original languageEnglish
Article number021125
JournalApplied Physics Letters
Volume93
Issue number2
DOIs
StatePublished - 14 Jul 2008

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