Light extraction enhancement of GaN-based light-emitting diodes using crown-shaped patterned sapphire substrates

Ching Hsueh Chiu*, Lung Hsing Hsu, Chia Yu Lee, Chien-Chung Lin, Bo Wen Lin, Shang Ju Tu, Yan Hao Chen, Che Yu Liu, Wen Ching Hsu, Yu-Pin Lan, Jinn Kong Sheu, Tien-chang Lu, Gou Chung Chi, Hao-Chung Kuo, Shing Chung Wang, Chun-Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.

Original languageEnglish
Article number6188511
Pages (from-to)1212-1214
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number14
DOIs
StatePublished - 20 Jun 2012

Keywords

  • Epitaxial lateral overgrowth
  • light-emitting diodes
  • metal-organic chemical vapor deposition

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    Chiu, C. H., Hsu, L. H., Lee, C. Y., Lin, C-C., Lin, B. W., Tu, S. J., Chen, Y. H., Liu, C. Y., Hsu, W. C., Lan, Y-P., Sheu, J. K., Lu, T., Chi, G. C., Kuo, H-C., Wang, S. C., & Chang, C-Y. (2012). Light extraction enhancement of GaN-based light-emitting diodes using crown-shaped patterned sapphire substrates. IEEE Photonics Technology Letters, 24(14), 1212-1214. [6188511]. https://doi.org/10.1109/LPT.2012.2195779