Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO 2 photonic quasi-crystal overgrowth

H. W. Huang, K. Y. Lee, J. K. Huang, C. H. Lin, C. F. Lin, C. C. Yu, Hao-Chung Kuo

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

In this paper, GaN-based LEDs with a SiO 2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 μm) was enhanced by a factor of 1.20. After 1000 h life test (55 °C/50 mA) condition, Normalized output power of LED with a SiO 2 PQC pattern (LED III (d = 1.2 μm)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.

Original languageEnglish
Pages (from-to)6363-6368
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume10
Issue number10
DOIs
StatePublished - 1 Oct 2010

Keywords

  • GaN
  • Light emitting diodes (LEDs)
  • Nano-imprint lithography (NIL)
  • Photonic quasi-crystal (PQC)

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