Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors

Wei Tsung Chen*, Hsiu Wen Hsueh, Hsiao-Wen Zan, Chuang Chuang Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color- and bias-polarity-dependent.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number7
DOIs
StatePublished - 29 Jun 2011

Fingerprint Dive into the research topics of 'Light-enhanced bias stress effect on amorphous In-Ga-Zn-O thin-film transistor with lights of varying colors'. Together they form a unique fingerprint.

Cite this