Light-emitting polymer space-charge-limited transistor

Chun Yu Chen, Yu Chiang Chao, Hsin-Fei Meng*, Sheng Fu Horng

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at -12 V and the grid base voltage varies from 0.9 to -0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m2. The current efficiency of the light-emitting transistor is 10 cd/A.

Original languageEnglish
Article number223301
JournalApplied Physics Letters
Volume93
Issue number22
DOIs
StatePublished - 12 Dec 2008

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