Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

Y. L. Chueh*, L. J. Chou, S. L. Cheng, J. H. He, Wen-Wei Wu, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Issue number6
StatePublished - 4 Jul 2005

Fingerprint Dive into the research topics of 'Light-emitting β-Fe(Si<sub>X</sub>Ge<sub>1-x</sub>)2 nanodots on Si<sub>0.8</sub>Ge<sub>0.2</sub> substrate'. Together they form a unique fingerprint.

Cite this