Light Emission Near 1.3 μm Using ITO-Al 2 O 3 -Si 0.3 Ge 0.7 -Si Tunnel Diodes

C. Y. Lin*, Albert Chin, Y. T. Hou, M. F. Li, S. P. McAlister, D. L. Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We have fabricated Sn:In 2 O 3 (ITO)-Al 2 O 3 dielectric on Si 1-x Ge x -Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 μm, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.

Original languageEnglish
Pages (from-to)36-38
Number of pages3
JournalIEEE Photonics Technology Letters
Volume16
Issue number1
DOIs
StatePublished - 1 Jan 2004

Keywords

  • Al O
  • Electroluminescence
  • Light
  • Light-emitting device (LED)
  • SiGe

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