Light emission from Al2O3/Si1-xGex/Si MOS tunnel diodes

C. Y. Lin, L. H. Lai, A. Chin, Y. T. Hou, M. F. Li, S. P. McAlister

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Light emission at ∼1.3 μm was measured at room temperature in Al2O3/Si1-xGex MOS tunnel diodes on Si substrates. The merits of this MOS LED is its compatibility with VLSI and photon energy <Eg of Si.

Original languageEnglish
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages51-52
Number of pages2
ISBN (Electronic)0780377273
DOIs
StatePublished - 1 Jan 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: 23 Jun 200325 Jun 2003

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2003-January
ISSN (Print)1548-3770

Conference

Conference61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period23/06/0325/06/03

Keywords

  • Dielectric substrates
  • Diodes
  • Energy measurement
  • Germanium silicon alloys
  • Indium tin oxide
  • Low voltage
  • MOSFET circuits
  • Quantization
  • Silicon germanium
  • Wavelength measurement

Fingerprint Dive into the research topics of 'Light emission from Al<sub>2</sub>O<sub>3</sub>/Si<sub>1-x</sub>Ge<sub>x</sub>/Si MOS tunnel diodes'. Together they form a unique fingerprint.

  • Cite this

    Lin, C. Y., Lai, L. H., Chin, A., Hou, Y. T., Li, M. F., & McAlister, S. P. (2003). Light emission from Al2O3/Si1-xGex/Si MOS tunnel diodes. In 61st Device Research Conference, DRC 2003 - Conference Digest (pp. 51-52). [1226867] (Device Research Conference - Conference Digest, DRC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226867