Light emission characteristics of nonpolar a -plane GaN-based photonic crystal defect cavities

Tsung-Sheng Kao, Tzeng Tsong Wu, Che Wei Tsao, Jyun Hao Lin, Da Wei Lin, Shyh Jer Huang, Tien-Chang Lu, Hao-Chung Kuo, Shing Chung Wang, Yan Kuin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, nonpolar a-plane GaN-based photonic crystals (PCs) with different defect cavities have been demonstrated. By using a micro-photoluminescence (μ-PL) system operated at 77 K, the dominant resonant modes of the GaN-based PC defect cavities show high quality factor (Q) values in the light emission performance which can be up to 4.3×103. Moreover, the degree of polarization (DOP) of the light emission from the nonpolar GaN-based PC defect cavities was measured to achieve around 64 % along the m crystalline direction.

Original languageEnglish
Title of host publicationHigh Contrast Metastructures IV
EditorsWeimin Zhou, Fumio Koyama, Connie J. Chang-Hasnain, David Fattal
PublisherSPIE
ISBN (Electronic)9781628414622
DOIs
StatePublished - 1 Jan 2015
EventHigh Contrast Metastructures IV - San Francisco, United States
Duration: 11 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9372
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceHigh Contrast Metastructures IV
CountryUnited States
CitySan Francisco
Period11/02/1512/02/15

Keywords

  • GaN
  • a-plane
  • defect cavity
  • nonpolar
  • photonic crystal

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