LED materials: Epitaxy and quantum well structures

Zhen Yu Li*, Hao Chung Kuo, Chen Yu Shieh, Ching Hsueh Chiu, Po Min Tu, Wu Yih Uen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

Original languageEnglish
Title of host publicationHandbook of Advanced Lighting Technology
PublisherSpringer International Publishing
Pages73-121
Number of pages49
ISBN (Electronic)9783319001760
ISBN (Print)9783319001753
DOIs
StatePublished - 1 Jan 2017

Fingerprint Dive into the research topics of 'LED materials: Epitaxy and quantum well structures'. Together they form a unique fingerprint.

  • Cite this

    Li, Z. Y., Kuo, H. C., Shieh, C. Y., Chiu, C. H., Tu, P. M., & Uen, W. Y. (2017). LED materials: Epitaxy and quantum well structures. In Handbook of Advanced Lighting Technology (pp. 73-121). Springer International Publishing. https://doi.org/10.1007/978-3-319-00176-0_10