LED materials: Epitaxy and quantum well structures

Zhen Yu Li*, Hao Chung Kuo, Chen Yu Shieh, Ching Hsueh Chiu, Po Min Tu, Wu Yih Uen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


This chapter describes how, in order to achieve low droop and high-efficiency light-emitting diodes (LEDs), we investigated the following multiple quantum wells (MQWs) and electron-blocking layer (EBL) design to enhance our LED devices: Graded-thickness multiple quantum wells (GQWs), graded-composition multiple quantum barriers (GQBs), selectively graded-composition multiple quantum barriers (SGQBs), and graded-composition electron-blocking layer (GEBL). Besides, the crystal quality of the epitaxial layer was enhanced by introducing freestanding GaN substrate for the epitaxial growth of III-nitride epilayer. On the other hand, in recent years, the epitaxial growth of GaN-based materials on Si substrate has a great potential for applications in low-cost and high-efficiency LEDs. Hence, the properties of GaN-based LEDs on Si will also be described in this chapter.

Original languageEnglish
Title of host publicationHandbook of Advanced Lighting Technology
PublisherSpringer International Publishing
Number of pages49
ISBN (Electronic)9783319001760
ISBN (Print)9783319001753
StatePublished - 1 Jan 2017

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