Leakage performance and breakdown mechanism of silicon-rich oxide and fluorinated oxide prepared by electron cyclotron resonance chemical vapor deposition

Kow-Ming Chang*, Shih Wei Wang, Ta Hsun Yeh, Chii Horng Li, Jiunn Jye Luo

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The characteristics of silicon-rich oxide and fluorinated oxide (FxSiOy) films deposited in an electron cyclotron resonance chemical vapor deposition system with SiH4 and O2 as the oxide sources and CF4 as the fluorinating precursor are investigated in this work. According to experimental results, the dangling bonds in Si-rich oxide behave as positively by charged electron traps and degrade the dielectric strength by lowering the barrier height for Fowler-Nordheim tunneling. On the other hand, a small amount of incorporated F atoms will passivate and neutralize these excess Si dangling bonds, thereby elevating the dielectric strength. However, too much incorporated F will degrade the pretunneling leakage performance owing to the porosity and fatigues structure in FxSiOy film. The high leakage and even breakdown at low field strongly limits the incorporated F concentration in FxSiOy film and the lowering of dielectric constant.

Original languageEnglish
Pages (from-to)1754-1759
Number of pages6
JournalJournal of the Electrochemical Society
Volume144
Issue number5
DOIs
StatePublished - 1 Jan 1997

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