Leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption

J. M. Lai*, Wei-Hua Chieng, B. C. Lin, Albert Chin, C. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

An intrinsic defect may exist in thin gate oxides. Such a defect can increase the leakage current in a manner similar to stress-induced leakage current. In this paper, we have shown that the effect of this intrinsic defect can be greatly reduced by in situ removal of the native oxide followed by growing a high-quality thermal oxide. By using such in situ cleaning, ultrathin oxides can be prepared with atomically smooth interfaces, good thickness uniformity, and reduced leakage currents.

Original languageEnglish
Pages (from-to)2216-2218
Number of pages3
JournalJournal of the Electrochemical Society
Volume146
Issue number6
DOIs
StatePublished - 1 Jun 1999

Fingerprint Dive into the research topics of 'Leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorption'. Together they form a unique fingerprint.

  • Cite this