Leakage behavior of the quasi-superlattice stack for multilevel charge storage

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, H. H. Wu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The leakage mechanism of the quasi-superlattice structure was investigated by current-voltage measurements for multilevel charge storage. It was found that the resonant tunneling occurred at around 2, 2.5 and 7V under a gate voltage swept from 0 to 10 V. It was observed that the the leakage current at room temperature remained low when the 10 V gate voltage was applied. It was also found that a negative differential resistance occurred at different gate biases for the measurements of 50 K.

Original languageEnglish
Pages (from-to)3687-3689
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - 3 May 2004

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