Layout styles to improve CDM ESD robustness of integrated circuits in 65-nm CMOS process

Ming-Dou Ker*, Chun Yu Lin, Tang Long Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Due to the thinner gate oxide in the nanoscale CMOS technology and the larger chip size in the system-on-chip (SoC) IC products, the charged-device-model (CDM) electrostatic discharge (ESD) has become the major ESD events to cause failures during IC manufacturing procedures. The effective ESD protection design against CDM ESD stresses should be implemented into the chip with layout optimization to improve its ESD robustness. In this work, the impacts of different layout styles of MOS devices on CDM ESD robustness were investigated in a 65-nm CMOS process. The experimental results can provide useful information to optimize the layout of integrated circuits against CDM ESD events.

Original languageEnglish
Title of host publicationProceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011
Pages374-377
Number of pages4
DOIs
StatePublished - 28 Jun 2011
Event2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011 - Hsinchu, Taiwan
Duration: 25 Apr 201128 Apr 2011

Publication series

NameProceedings of 2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011

Conference

Conference2011 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2011
CountryTaiwan
CityHsinchu
Period25/04/1128/04/11

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