Layout-dependent stress effect on high-frequency characteristics and flicker noise in multifinger and donut MOSFETs

Kuo Liang Yeh*, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The impact of MOSFET layout-dependent stress on high-frequency performance and flicker noise has been investigated. The proposed donut MOSFETs demonstrate the advantages over the standard multifinger MOSFETs, such as the lower flicker noise S ID/I DS 2 in the low-frequency domain and the higher cutoff frequency f T in the very high-frequency region. The elimination of the transverse stress σ from shallow trench isolation (STI) and the suppression of interface traps along the STI edge are proposed as the primary factors responsible for the enhancement of the effective mobility μ eff, as well as f T, and the reduction of flicker noise. The significantly lower flicker noise realized by donut devices suggests the reduction of STI-generated traps and the suppression of mobility fluctuation due to eliminated transverse stress. The former is applied to n-channel MOS in which the flicker noise is determined by the number-fluctuation model. The latter is responsible for p-channel MOS whose flicker noise is dominated by the mobility-fluctuation model.

Original languageEnglish
Article number5944963
Pages (from-to)3140-3146
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number9
DOIs
StatePublished - 1 Sep 2011

Keywords

  • Cutoff frequency
  • donut
  • flicker noise
  • longitudinal stress
  • mobility
  • shallow trench isolation (STI)
  • transverse stress

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