Layout-dependent effects on high frequency performance and noise of sub-40nm multi-finger n-channel and p-channel MOSFETs

Kuo Liang Yeh*, Chih Shiang Chang, Jyh-Chyurn Guo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Layout dependent effects on high frequency performance parameters like f T , f MAX , and RF noise in sub-40nm multi-finger MOSFETs is investigated in this paper. Narrow-OD MOSFET with smaller finger width and larger finger number can achieve lower R g and higher f MAX . However, these narrow-OD devices suffer f T degradation and higher noise figure, even with the advantage of lower R g . The mechanisms responsible for the trade-off between different parameters will be presented to provide an important guideline of device layout for RF circuits design using nanoscale CMOS technology.

Original languageEnglish
Title of host publicationIMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs
StatePublished - 3 Oct 2012
Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
Duration: 17 Jun 201222 Jun 2012

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2012 IEEE MTT-S International Microwave Symposium, IMS 2012
CountryCanada
CityMontreal, QC
Period17/06/1222/06/12

Keywords

  • F
  • F
  • High frequency
  • Layout
  • Multi-finger MOSFET
  • Nanoscale CMOS
  • Noise

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