Conventional fault models define their faulty behavior at the IO ports of standard cells with simple rules of fault activation and fault propagation. However, there still exist some defects inside a cell (intra-cell) or between two cells (dual-cell) that cannot be effectively detected by the test patterns of conventional fault models and hence become a source of DPPM. In order to further increase the defect coverage, many research works have been conducted to study the fault models resulting from different types of intra-cell and dual-cell defects, by SPICE-simulating each targeted defect with its equivalent circuit-level defect model. However, it was considered computationally infeasible to simulate every possible defective scenario for a cell library and obtain a complete set of cell-level fault models. In this paper, we present a new dual-cell-aware (DCA) framework based on examining the layout of two adjacent cells (i.e., a dual cell) to identify potential defects, where time-consuming RC extraction can be avoided and the runtime for SPICE simulation can be reduced. Experimental results and silicon data on a SoC product show that the proposed DCA framework can not only save runtime significantly but also maintain the promising efficacy of DCA tests for the objective of lowering DPPM.