Lateral two-dimensional p-i-n diode in a completely undoped GaAs/AlGaAs quantum well

Van Truong Dai*, Sheng-Di Lin, Shih Wei Lin, Jau Yang Wu, Liang Chen Li, Chien Ping Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction.

Original languageEnglish
Article number014001
JournalJapanese Journal of Applied Physics
Volume52
Issue number1
DOIs
StatePublished - 1 Jan 2013

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