Lateral two-dimensional p-i-n diode in a completely undoped GaAs/AlGaAs quantum well

Van Truong Dai; Sheng-Di Lin; Shih Wei Lin; Jau Yang Wu; Liang Chen Li; Chien Ping Lee

doi:10.7567/JJAP.52.014001

Lateral two-dimensional p-i-n diode in a completely undoped GaAs/AlGaAs quantum well

Van Truong Dai^*, Sheng-Di Lin, Shih Wei Lin, Jau Yang Wu, Liang Chen Li, Chien Ping Lee

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction.

Original language	English
Article number	014001
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	1
DOIs	https://doi.org/10.7567/JJAP.52.014001
State	Published - 1 Jan 2013

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title = "Lateral two-dimensional p-i-n diode in a completely undoped GaAs/AlGaAs quantum well",

abstract = "A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction.",

author = "Dai, {Van Truong} and Sheng-Di Lin and Lin, {Shih Wei} and Wu, {Jau Yang} and Li, {Liang Chen} and Lee, {Chien Ping}",

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AU - Dai, Van Truong

AU - Lin, Sheng-Di

AU - Lin, Shih Wei

AU - Wu, Jau Yang

AU - Li, Liang Chen

AU - Lee, Chien Ping

PY - 2013/1/1

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AB - A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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