Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor

Ming Jang Lin*, Tsung Hwang Lee, Fang Long Chang, Chorng Wei Liaw, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Superjunction devices are reported to provide better high-voltage operation characteristics than conventional abrupt junction devices in silicon power applications. In this study, the superjunction reduced surface field (SJ-RESURF) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) is fabricated on a bulk silicon wafer to improve the operating characteristics of high-voltage devices. By introducing the p-type strips in the drift region, higher doping concentration of the drift region can be adopted to reduce the conduction resistance. The SJ-RESURF LDMOSFET with a specific on-resistance of 3.53 ω·mm2 a breakdown voltage of 335 V and a drift length of 30 μm, is demonstrated; its turn on-resistance is 25% better than that of the conventional structure. The turn-on resistance, breakdown behavior, device geometry, temperature, and charge balance mechanics of the SJ-RESURF LDMOSFET are examined herein.

Original languageEnglish
Pages (from-to)7227-7231
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number12
DOIs
StatePublished - 1 Dec 2003

Keywords

  • Breakdown voltage
  • LDMOSFET
  • Power device
  • RESURF
  • SJ-RESURF
  • Specific on-resistance
  • Superjunction

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