Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology

N. K. Zous*, M. Y. Lee, W. J. Tsai, Albert Kuo, L. T. Huang, T. C. Lu, C. J. Liu, Ta-Hui Wang, W. P. Lu, Wenchi Ting, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The negative threshold voltage (Vt shift of a nitride storage flash memory cell in the erase state will result in an increase in leakage current. By utilizing a charge pumping method, we found that trapped hole lateral migration is responsible for this Vt shift. Hole transport in nitride is characterized by monitoring gate induced drain leakage current and using a thermionic emission model. The hole emission induced Vt, shift shows a linear correlation with bake time in a semi-logarithm plot and its slope depends on the bake temperature. Based on the result, an accelerated qualification method for the negative Vt drift is proposed.

Original languageEnglish
Pages (from-to)649-651
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number9
DOIs
StatePublished - 1 Jan 2004

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    Zous, N. K., Lee, M. Y., Tsai, W. J., Kuo, A., Huang, L. T., Lu, T. C., Liu, C. J., Wang, T-H., Lu, W. P., Ting, W., Ku, J., & Lu, C. Y. (2004). Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology. IEEE Electron Device Letters, 25(9), 649-651. https://doi.org/10.1109/LED.2004.833824