An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.
|Title of host publication||2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04|
|State||Published - 1 Dec 2004|
|Event||2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 - Grapevine, TX, United States|
Duration: 19 Sep 2004 → 23 Sep 2004
|Name||Electrical Overstress/Electrostatic Discharge Symposium Proceedings|
|Conference||2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04|
|Period||19/09/04 → 23/09/04|