Latchup test-induced failure within ESD protection diodes in a high-voltage CMOS IC product

I. Cheng Lin*, Chuan Jane Chao, Ming-Dou Ker, Jen Chou Tseng, Chung Ti Hsu, Len Yi Leu, Yu Lin Chen, Chia Ku Tsai, Ren Wen Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

An EOS-like latchup failure occurred in a high-voltage IC product during latchup test and was identified within ESD diodes themselves. A parasitic npn bipolar formed by ESD protection diodes was trigger-activated and produced large current to result in EOS failure. This was verified by electrical measurement from TLP and curve-tracer as well as physical failure analysis. Corresponding layout solutions were proposed and solved this anomalous latchup failure successfully. Therefore ESD protection diode should be laid carefully for true latchup-robust design.

Original languageEnglish
Title of host publication2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
DOIs
StatePublished - 1 Dec 2004
Event2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04 - Grapevine, TX, United States
Duration: 19 Sep 200423 Sep 2004

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Conference

Conference2004 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD '04
CountryUnited States
CityGrapevine, TX
Period19/09/0423/09/04

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