Latchup-free fully-protected ESD protection circuit for input pad of submicron CMOS ICs

Ming-Dou Ker*, Tain Shun Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A latchup-free on-chip input ESD protection circuit with a concept of full protection against ESD damage is proposed. Tnnhe four modes of ESD stresses on an input pad are one-by-one protected by four effective ESD discharging paths in this proposed ESD protection circuit to avoid unexpected ESD damage. This ESD protection circuit was included in a 0.8 μm cell library to successfully provide high ESD reliability for input pads of CMOS ASICs within a small layout area.

Original languageEnglish
Pages (from-to)1329-1336
Number of pages8
JournalSolid-State Electronics
Volume41
Issue number9
DOIs
StatePublished - 1 Jan 1997

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