La2O3 insulators prepared by ALD using La( iPrCp)3 source: Self-limiting growth conditions and electrical properties

Kenji Ozawa*, Miyuki Kouda, Yuji Urabe, Tetsuji Yasuda, Kuniyuki Kakushima, Parhat Ahmet, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

La2O3 insulators have been prepared by ALD using La(iPrCp)3 and H2O as the source materials. We identified two necessary conditions to achieve the self-limiting growth: temperatures lower than 200°C and extremely long purging after H 2O pulses. La2O3 insulators annealed at 500°C showed good MOS properties with no hysteresis and small flat-band voltage shift. Comparisons to the have La2O3 films prepared by electron-beam evaporation indicated that the ALD process needs further optimization especially to improve the k value (presently ∼12) as well as the leakage suppression.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages932-934
Number of pages3
DOIs
StatePublished - 2010
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

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