Lasing characteristics of GaN vertical-cavity surface-emitting lasers with dielectric DBRs fabricated by laser-lift-off technique

Jung Tang Chu, Hsin Hung Yao, Wen Deng Liang, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The lasing characteristics of a GaN VCSEL with two dielectric DBRs of SiO2/TiO2 and SiO2/Ta2O5 were investigated. The laser emits wavelength at 414 nm under optical pumping at room temperature with a threshold energy of 270 nJ.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
DOIs
StatePublished - 1 Jan 2006
EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
Duration: 21 May 200621 May 2006

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2006
CountryUnited States
CityLong Beach, CA
Period21/05/0621/05/06

Fingerprint Dive into the research topics of 'Lasing characteristics of GaN vertical-cavity surface-emitting lasers with dielectric DBRs fabricated by laser-lift-off technique'. Together they form a unique fingerprint.

Cite this