Lasing behavior analysis in GaN-based 2D photonic crystal surface emitting lasers with localized defect

Tzeng Tsong Wu*, Peng Shiang Weng, Yen Ju Hou, You Ching Lin, Chi Cheng Chen, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The GaN-based two-dimensional (2D) Photonic Crystal Surface Emitting Lasers (PCSELs) with different type of localized defect have been fabricated and investigated. According to the different cavity sizes, the threshold energy density and lasing wavelength of PCSELs could be investigated by micro-Photoluminescence (μ-PL) system. Besides, by using the Multiple Scattering Method, the threshold gain of different defect cavities of PCSELs could be calculated precisely and well matched to the experimental results.

Original languageEnglish
Title of host publicationConference Program - MOC'11
Subtitle of host publication17th Microoptics Conference
StatePublished - 1 Dec 2011
Event17th Microoptics Conference, MOC'11 - Sendai, Japan
Duration: 30 Oct 20112 Nov 2011

Publication series

NameConference Program - MOC'11: 17th Microoptics Conference

Conference

Conference17th Microoptics Conference, MOC'11
CountryJapan
CitySendai
Period30/10/112/11/11

Keywords

  • GaN
  • Multiple Scattering Method
  • photonic crystal
  • surface emitting laser

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