Lasing at approximately 1 μm from In0.2Ga0.8As/GaAs quantum well surface-emitting resonators with GaAs/AlAs mirrors

K. Tai*, Kai-Feng Huang, J. L. Jewell, R. J. Fischer, S. L. McCall, A. Y. Cho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The authors demonstrate ultra-low-threshold, optically pumped, surface-emitting lasing from MBE-grown resonators containing In0.2Ga0.8As/GaAs strained quantum well active layers and GaAs/AlAs mirrors. The emission wavelength ranged from approximately 0.98 to 1.0 μm in the two samples grown, and it varied with position on the samples. The lasing threshold was 50 pJ on an estimated area of 30 μm2. The single-mode emission linewidth just above threshold was 1 nm. At high pump energies the observed spectrum (time-integrated) was broadened toward short wavelengths mainly due to dynamic tuning of the cavity. The threshold carrier density was estimated to be 5 × 1012 cm-2/well using a 30-μm2 spot area and 25-pJ absorbed energy. The threshold current density for these structures is 20 μA/μm2 if they are pumped electrically. Nonlinear optical switching at 1.06 μm with a 5:1 contrast was achieved with a 20-pJ, 0.9-μm pump.

Original languageEnglish
Title of host publicationCONFERENCE ON LASERS AND ELECTRO-0PTICS
Editors Anon
PublisherPubl by IEEE
Pages382-384
Number of pages3
ISBN (Print)1557520860
StatePublished - 1 Dec 1989
EventSummaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD, USA
Duration: 24 Apr 198928 Apr 1989

Publication series

NameCONFERENCE ON LASERS AND ELECTRO-0PTICS

Conference

ConferenceSummaries of Papers Presented at the Conference on Lasers and Electro-Optics
CityBaltimore, MD, USA
Period24/04/8928/04/89

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