Lasing Action in GaN-Based VCSELs with top High-Contrast Grating Reflectors

Tsu Chi Chang, Shuo Yi Kuo, Ehsan Hashemi, Åsa Haglund, Tien-chang Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm2 and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.

Original languageEnglish
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages191-192
Number of pages2
ISBN (Electronic)9781538664865
DOIs
StatePublished - 30 Oct 2018
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: 16 Sep 201819 Sep 2018

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Conference

Conference26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period16/09/1819/09/18

Keywords

  • GaN
  • high contrast grating (HCG)
  • TiO
  • vertical cavity surface emitting laser (VCSEL)

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