Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

Kung Shu Hsu, Wei Chun Hung, Chih Chi Chang, Wei Hsun Lin, Min Hsiung Shih, Po-Tsung Lee, Shih Yen Lin, Shu Wei Chang, Yia Chung Chang

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Abstract

We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

Original languageEnglish
Article number091113
JournalApplied Physics Letters
Volume107
Issue number9
DOIs
StatePublished - 21 Aug 2015

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