A laser driver capable of driving over 100mA modulation current fabricated in 0.35 μm SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24ps rise time, 26ps (20% to 80%) fall time, and a jitter (RMS) less than 2ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.
|Number of pages||4|
|State||Published - 1 Dec 2004|
|Event||2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan|
Duration: 6 Dec 2004 → 9 Dec 2004
|Conference||2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology|
|Period||6/12/04 → 9/12/04|