Laser/modulator driver with high modulation output operating up to 14-GB/S using 0.35μm sige bicmos process

Day Uei Li*, Chia-Ming Tsai, Li Ren Huang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

A laser driver capable of driving over 100mA modulation current fabricated in 0.35 μm SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24ps rise time, 26ps (20% to 80%) fall time, and a jitter (RMS) less than 2ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.

Original languageEnglish
Pages225-228
Number of pages4
StatePublished - 1 Dec 2004
Event2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan
Duration: 6 Dec 20049 Dec 2004

Conference

Conference2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
CountryTaiwan
CityTainan
Period6/12/049/12/04

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