Laser lift-off mechanisms of GaN epi-layer grown on pattern sapphire substrate

Tai Min Chang, Hsin Kai Fang, Cheng Liao, Wen Yang Hsu, Yew-Chuhg Wu

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FTLED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.

Original languageEnglish
Pages (from-to)R20-R22
JournalECS Journal of Solid State Science and Technology
Volume4
Issue number2
DOIs
StatePublished - 1 Jan 2015

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