Large-scale statistical simulation of characteristic variation in 16-nm-gate Bulk FinFET devices due to work function fluctuation

Chun Yen Yiu*, Hui Wen Cheng, Hsin Wen Su, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We, for the first time, study the work-function fluctuation induced variability in 16-nm-gate bulk FinFET using an experimentally calibrated 3D device simulation. Random nanosized grains of TiN gate are statistically positioned in the gate region to examine the associated carrier transportation characteristics, concurrently capturing "grain number variation" and "grain position fluctuation." The methodology of localized work-function fluctuation simulation enables us to estimate various characteristic fluctuations and to examine the random grain's number and position effect for 16-nm-gate bulk FinFETs with TiN/HfO2 gate stacks with respect to the aspect ratio (AR = fin height/fin width).

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • bulk FinFET
  • large scale 3D device simulation
  • metal gate
  • random grain's number and position
  • random work function
  • threshold voltage fluctuation
  • TiN gate

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