Large-scale atomistic approach to random-dopant-induced characteristic variability in nanoscale CMOS digital and high-frequency integrated circuits

Yiming Li*, Chih Hong Hwang, Ta Ching Yeh, Tien Yen Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

Modeling of device variability is crucial for the accuracy of timing in circuits and systems, and the stability of high-frequency application. Unfortunately, due to the randomness of dopant position in device, the fluctuation of device gate capacitance is nonlinear and hard to be modeled in current compact models. Therefore, a large-scale statistically sound "atomistic" device/circuit coupled simulation approach is proposed to characterize the random-dopant-induced characteristic fluctuations in 16-nm-gate CMOS integrated circuits concurrently capturing the discrete-dopant-number- and discrete-dopant-position-induced fluctuations. The variations of transition time of digital circuit (inverter, NAND, and NOR gates) and high-frequency characteristic of common-source amplifier are estimated. For the digital circuits, the function-dependent and circuit-topology-dependent characteristic fluctuations resulted from random nature of discrete dopants is for the first time discussed. This study provides an insight into random-dopant- induced intrinsic timing and high-frequency characteristic fluctuations. The accuracy of the simulation technique is confirmed by the use of experimentally calibrated transistor physical model.

Original languageEnglish
Title of host publication2008 IEEE/ACM International Conference on Computer-Aided Design Digest of Technical Papers, ICCAD 2008
Pages278-285
Number of pages8
DOIs
StatePublished - 2008
Event2008 International Conference on Computer-Aided Design, ICCAD - San Jose, CA, United States
Duration: 10 Nov 200813 Nov 2008

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
ISSN (Print)1092-3152

Conference

Conference2008 International Conference on Computer-Aided Design, ICCAD
CountryUnited States
CitySan Jose, CA
Period10/11/0813/11/08

Keywords

  • Device variability
  • Digital circuit
  • Fluctuation
  • High frequency circuit
  • Random dopant
  • Timing

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