Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation

K. T. Chan*, C. H. Huang, Albert Chin, M. F. Li, Dim Lee Kwong, S. P. McAlister, D. S. Duh, W. J. Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

We have improved the Q-factor of a 4.6 nH spiral inductor, fabricated on a standard Si substrate, by more than 60%, by using an optimized proton implantation process. The inductor was fabricated in a 1-poly-6-metal process, and Implanted after processing. The implantation increased the substrate impedance by ∼ one order of magnitude without disturbing the inductor value before resonance. The S-parameters were well described by an equivalent circuit model. The significantly improved inductor performance and VLSI-compatible process makes the proton implantation suitable for high performance RF ICs.

Original languageEnglish
Pages (from-to)460-462
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume13
Issue number11
DOIs
StatePublished - 1 Nov 2003

Keywords

  • Implantation
  • Inductor
  • Q-factor
  • RF

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    Chan, K. T., Huang, C. H., Chin, A., Li, M. F., Kwong, D. L., McAlister, S. P., Duh, D. S., & Lin, W. J. (2003). Large Q-Factor Improvement for Spiral Inductors on Silicon Using Proton Implantation. IEEE Microwave and Wireless Components Letters, 13(11), 460-462. https://doi.org/10.1109/LMWC.2003.819383